晶体管 RX1214B300Y 数据表

RX1214B300Y

硅 NPN 晶体管

GFX

U_CE/U_CB

60/65V

I_C

21A

h_FE

P_tot

570W

f_T

1.4GHz

T_J

200°C

the RX1214B300Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applicati... [更多]

the RX1214B300Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applications

图像:

来源:

PSC Philips Data Handbook...... [更多]

PSC Philips Data Handbook SC15

更多信息 RX1214B300Y
OEM:	Philips Semi... [更多] Philips Semiconductors
封装:	SOT439A
数据表 (jpg):	-
数据表 (pdf):	-
OEM 数据表:	-
匹配型号:	-
相似型号:	-
相似型号搜索:	相似搜索

零件搜索:	搜索

RX1214B300Y

硅 NPN 晶体管

GFX

U_CE/U_CB

60/65V

I_C

21A

h_FE

P_tot

570W

f_T

1.4GHz

T_J

200°C

the RX1214B300Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applications

图像:

来源:

PSC Philips Data Handbook...... [更多]

PSC Philips Data Handbook SC15

更多信息 RX1214B300Y
OEM:	Philips Semi... [更多] Philips Semiconductors
封装:	SOT439A
数据表 (jpg):	-
数据表 (pdf):	-
OEM 数据表:	-
匹配型号:	-
相似型号:	-
相似型号搜索:	相似搜索

零件搜索:	搜索

RX1214B300Y

硅 NPN 晶体管

GFX

U_CE/U_CB

60/65V

I_C

21A

h_FE

P_tot

570W

f_T

1.4GHz

T_J

200°C

the RX1214B300Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applications

图像:

来源:

PSC Philips Data Handbook...... [更多]

PSC Philips Data Handbook SC15

更多信息 RX1214B300Y
OEM:	Philips Semi... [更多] Philips Semiconductors
封装:	SOT439A
数据表 (jpg):	-
数据表 (pdf):	-
OEM 数据表:	-
匹配型号:	-
相似型号:	-
相似型号搜索:	相似搜索

零件搜索:	搜索